Texturing for mono-crystalline silicon solar cell by chemical anisotropic etching is one of the most important techniques in photovoltaic industry. In recent years, tetramethylammonium hydroxide (TMAH) solution or a mixture of TMAH solution with IPA was reported to be used for random pyramids texturization on silicon surface due to its non-volatile, nontoxic, good anisotropic etching characteristics and uncontaminated metal ions. However, most of the studies were reported about the etching processes by using high TMAH concentration solutions. In this study, a simple and cost-effective approach for texturing mono-crystalline silicon wafers in low TMAH concentration solutions was proposed. Etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions (0.5~1 %) without addition of surfactant. The surface phenomena, surface morphology and surface reflectance have been analyzed. A textured surface with smaller and smooth pyramids can be realized by using 1 % silicon-dissolved TMAH solutions.