Effects of IPA on Texturing Process for Mono-Crystalline Silicon Solar Cell in TMAH Solution
| Periodical | Materials Science Forum (Volume 685) |
|---|---|
| Main Theme | Energy, Environment and Biological Materials |
| Edited by | Kunyuan Gao, Shaoxiong Zhou, Xinqing Zhao |
| Pages | 31-37 |
| DOI | 10.4028/www.scientific.net/MSF.685.31 |
| Citation | Wei Ying Ou et al., 2011, Materials Science Forum, 685, 31 |
| Online since | June, 2011 |
| Authors | Wei Ying Ou, Yao Zhang, Hai Ling Li, Lei Zhao, Chun Lan Zhou, Hong Wei Diao, Min Liu, Wei Ming Lu, Jun Zhang, Wen Jing Wang |
| Keywords | IPA, Pyramid, Texture, TMAH |
| Price | US$ 28,- |
Texturization of mono-crystalline by chemical anisotropic etching is one of the most important technologies for modern silicon photovoltaic. IPA is usually added to the alkaline etchants to improve the uniformity of the random pyramid texture due to remove hydrogen bubbles sticking on the silicon wafer by improving the wettability of wafer surface. In this investigation, we carried out a systematic study on the influence of IPA concentrations on the textured surface. The etching experiments were performed on (100) silicon wafer in a mixture of 20 vol. % commercial TMAH solutions (10 wt.%) and IPA (rang from 0~12 vol. %) for etching time ranging from 10 to 70 min at 80oC. The etching mechanism in the TMAH solutions with IPA addition was explained basing on the experimental results and the theoretical considerations.