Paper Title:
Excellent Surface Passivation by Silicon Dioxide Grown with a Electrochemical Method
  Abstract

A novel method to grow silicon dioxide layers for passivating the silicon surface is given more attention. SiO2 was grown by applying a positive voltage across silicon wafers in a nitric acid solution at low temperature. After annealing in N2 media at 900°C for 20min, excellent surface passivation was achieved. The maximum effective lifetime of the silicon arrived at 29.8μs and 29.75μs, which was three times the value of silicon without passivation. The effective lifetime of other types of silicon could be ten times the initial value without the silicon dioxide. A comparison study of the effect of the FGA, annealing at low temperature and annealing in N2 or O2 containing medium at high temperature were investigated.

  Info
Periodical
Edited by
Kunyuan Gao, Shaoxiong Zhou, Xinqing Zhao
Pages
48-54
DOI
10.4028/www.scientific.net/MSF.685.48
Citation
J. Zhang, W. M. Lu, C. L. Zhou, Z. L. Wen, L. Zhao, H. L. Li, H. W. Diao, Y. Zhang, W. J. Wang, "Excellent Surface Passivation by Silicon Dioxide Grown with a Electrochemical Method", Materials Science Forum, Vol. 685, pp. 48-54, 2011
Online since
June 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Fuccio Cristiano, El Mehdi Bazizi, Pier Francesco Fazzini, Simona Boninelli, Ray Duffy, Ardechir Pakfar, Silke Paul, Wilfried Lerch
Abstract:In this paper, we investigate the evolution of extended defects during a millisecond Flash anneal after a preamorphising implant. The...
269
Authors: Hong Hua Zhang, Wei Min Gao, Y.L. Shen, B.S. Li
Abstract:Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to...
287
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625