Paper Title:
Effect of Annealing on Structural and Optical Properties of Zr Doped ZnO Film Grown by RF Magnetic Sputtering
  Abstract

Zinc oxide (ZnO) and Zirconium (Zr) doped ZnO nano films have been successfully fabricated by radio frequency (RF) magnetic sputtering. The crystal structure and morphology were investigated by X-ray Diffraction (XRD), Field Emission-Scanning Electron Microscope (FE-SEM) and Transmission Electron Microscope (TEM). As the doped Zr content increases, ZnO nano films show various morphologies. The optical band gap of pure ZnO films increases from 3.27 eV to 3.53 eV with Zr concentration increasing to 9.66 at.%. After annealing, the polycrystalline structure of ZnO changes a little and the energy gap decreases. In addition, the clean and lower doped ZnO films show much lower transmittance.

  Info
Periodical
Edited by
Yafang Han, Fusheng Pan, Jianmao Tang, Chungen Zhou
Pages
696-705
DOI
10.4028/www.scientific.net/MSF.686.696
Citation
J. Wang, C.Y. Zhang, Z. G. Wu, P. X. Yan, "Effect of Annealing on Structural and Optical Properties of Zr Doped ZnO Film Grown by RF Magnetic Sputtering", Materials Science Forum, Vol. 686, pp. 696-705, 2011
Online since
June 2011
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$32.00
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