Paper Title:
A HRTEM Study of Resistive Switching Behaviour in SiO2 Thin Films by Sol-Gel Process
  Abstract

Amorphous SiO2 thin films were fabricated at different temperatures using sol-gel technique. The unipolar resistive switching behavior was observed in Cu/ SiO2/ ATO (SnO2: Sb) sandwiched structure when the SiO2 thin film annealed at 500°C. The average ratio of Roff /Ron is 102. We investigated the successful device using HRTEM and XPS. It shows that the Cu defuses into the SiO2 thin film and it forms CuSiO3 in the interface between SiO2 and ATO films according to the high resolution images.

  Info
Periodical
Edited by
Chengming Li, Chengbao Jiang, Zhiyong Zhong and Yichun Zhou
Pages
1-6
DOI
10.4028/www.scientific.net/MSF.687.1
Citation
Y. Li, G. Y. Zhao, X. F. Zhou, L. N. Pan, Y. Ren, "A HRTEM Study of Resistive Switching Behaviour in SiO2 Thin Films by Sol-Gel Process", Materials Science Forum, Vol. 687, pp. 1-6, 2011
Online since
June 2011
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