Conductive LaNiO3(LNO) thin films are grown on Si(100) substrates by a sol-gel method and their application as the bottom electrode for the growth of sol-gel derived Pb(Zr,Ti)O3(PZT) thin films are studied. Morphology and electrical properties of the multilayer films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), electrical measurements. Experiment results show LNO thin films get highly (110)-oriented perovskite-type structure. Smooth and dense surfaces are observed on LNO thin films. The dielectric properties of PZT films show that PZT/LNO films exhibit worse dielectric properties than those of the PZT/Pt thin films. And LNO thin films prepared by sol-gel methods are not suitable as bottom electrode to deposit PZT thin films. On the other hand, FTIR spectrum and pyroelectric results of LNO thin films reveal that LNO can be used as absorber layer of PT thin films infrared detector with multi-layer thin film thermal insulation structure. At 10Hz, the detectivity (D*) and the voltage response (Rv) of PT thin films are 1.11×107cm·Hz1/2/W, 1.46×103V/W respectively.