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Molecular Beam Epitaxy

Materials Science Forum Volume 69

• Papers
• Abstracts

• p1 Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE   [ 345 K ]
  Authors: J.M. Zhou, Hao Qing Hou, Y. Huang
• p9 Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and Al_xGa_1-xAs Layers   [ 214 K ]
  Authors: S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov
• p13 Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode   [ 139 K ]
  Authors: S.V. Ivanov, P.S. Kop'ev, V.I. Korol'kov, N.N. Ledentsov, M.E. Lutsenko, B.Ya. Mel'tser, T.S. Tabarov, S.V. Shaposhnikov
• p17 Sb Delta-Type Doping in Si-MBE Superlattices   [ 287 K ]
  Authors: Alexander I. Nikiforov, B.Z. Kanter, S.I. Stenin, S.V. Rubanov
• p21 Molecular Beam Heteroepitaxy on Silicon Substrates   [ 288 K ]
  Authors: A. Zehe
• p29 MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors   [ 328 K ]
  Authors: N.S. Sokolov
• p37 Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source   [ 89 K ]
  Authors: A. Kozhukhov
• p41 Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions   [ 188 K ]
  Authors: J. Aarik, J. Lembra, H. Siimon
• p45 PED Mechanism Studied by Moleculardynamic Computer Simulation   [ 126 K ]
  Authors: B. Fritzsch, B. Wolf, A. Zehe
• p49 Growth of Aluminum and Copper on Silicon by Molecular Beam Epitaxy   [ 128 K ]
  Authors: M. Büschel, T. Gantz, A. Thomas, A. Zehe
• p53 MBE System for Research   [ 271 K ]
  Authors: M. Laznicka
• p57 Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology   [ 105 K ]
  Authors: B. Adamczyk, L. Michalak, E. Radzka
• p61 The Liquid Metal Ion Source for Molecular Beam Epitaxy of Silicon   [ 85 K ]
  Authors: V. Avrutin, A.F. Vyatkin
• p65 Prior to Growth Examinations of the Quality of GaAs Substrates   [ 50 K ]
  Authors: M. Cukr, J. Kub, J. Pastrňák, J. Oswald, V. Mísková
• p67 The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications   [ 305 K ]
  Authors: P.S. Kop'ev, A.A. Budza, S.V. Ivanov, N.N. Ledentsov, B.Ya. Mel'tser, M.Yu. Nadtochy, V.M. Ustinov