Paper Title:
Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence
  Abstract

  Info
Periodical
Edited by
G. Minchev and L. Pramatarova
Pages
179-182
DOI
10.4028/www.scientific.net/MSF.69.179
Citation
J. Pastrňák, A. Bosacchi, A. Salokatve, J. Varrio, M. Láznicka, "Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence", Materials Science Forum, Vol. 69, pp. 179-182, 1991
Online since
January 1991
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Price
$32.00
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