Paper Title:
Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts
  Abstract

  Info
Periodical
Edited by
G. Minchev and L. Pramatarova
Pages
99-100
DOI
10.4028/www.scientific.net/MSF.69.99
Citation
Z. E. Horváth, B. Kovács, M. Németh-Sallay, B. Pécz, "Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts", Materials Science Forum, Vol. 69, pp. 99-100, 1991
Online since
January 1991
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Price
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