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Molecular Beam Epitaxy

Materials Science Forum Volume 69

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• p155 Low-Temperature Anomalies of 2D Electrons n-Al_xGa_1-xAs/GaAs Transfer Phenomena   [ 92 K ]
  Authors: V.I. Kadushkin, A.P. Senichkin
• p159 In Situ REM Study of Silicon Surface during MBE Processes   [ 669 K ]
  Authors: Alexander V. Latyshev, A.B. Krasilnikov
• p163 Investigation of Sublimation Process of (111) and (100)CdTe Films by Rheed Intensity Oscillation   [ 127 K ]
  Authors: S.A. Dvoretskiy, V.V. Kalinin, V.D. Kuzmin, Y.G. Sidorov
• p167 Composition of Oxides on (100) GaAs Produced by Oxygen Ion Bombardment   [ 173 K ]
  Authors: M. Láznicka
• p171 Characteristics and Application of Thin Epitaxial Dielectrics Formed by MBE   [ 160 K ]
  Authors: M. Maeder, F. Sellam, A. Zehe
• p175 SEM Investigation of Defects on InP   [ 296 K ]
  Authors: R. Fellenberg, W. Erfurth
• p179 Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence   [ 199 K ]
  Authors: J. Pastrňák, A. Bosacchi, A. Salokatve, J. Varrio, M. Láznicka
• p183 Ultrahigh Vacuum System   [ 294 K ]
  Authors: V.I. Kratenko
• p189 GaAs and GaSb Treatment for MBE   [ 662 K ]
  Authors: Lilyana Pramatarova, G.M. Michev, H. Naradikjan, L.M. Trendafilov