Paper Title:
The Research on Ferromagnetism of the Y Doped ZnO Film
  Abstract

We have calculated the energy band structure of spin-polarized electronic in Zn15Y1O16 and Zn14Y1O16 and the formation energy of Zn10Y4O16 in the ferromagnetical and antiferromagnetical state by the linear augmented plane wave based on the local density approximation. The results show that the Y doped ZnO film may be ferromagnetic and Zn vacancy (VZn) is the origin of ZnO thin film with Y doping.

  Info
Periodical
Chapter
Chapter 2: Frontiers of Materials Science and Engineering
Edited by
Ran Chen
Pages
928-930
DOI
10.4028/www.scientific.net/MSF.694.928
Citation
Z. H. Lan, X. J. Miao, "The Research on Ferromagnetism of the Y Doped ZnO Film", Materials Science Forum, Vol. 694, pp. 928-930, 2011
Online since
July 2011
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