Paper Title:
Defects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction
  Abstract

Diode leakage current consists of diffusion (Id) and generation current (Ig), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (Ea). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current–voltage (I V) and capacitance–voltage (C-V) measurements of diodes. The Ig can be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (Ea) is derived from slope of an Arrhenius plot of Ig. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The Ea profile below junction has been shown. The lower Ea value has been found near the junction, which may relate to the junction implantation.

  Info
Periodical
Edited by
Hyungsun Kim, Jian Feng Yang, Chuleol Hee Han, Somchai Thongtem and Soo Wohn Lee
Pages
569-572
DOI
10.4028/www.scientific.net/MSF.695.569
Citation
I. Srithanachai, S. Ueamanapong, P. Rujanapich, N. Atiwongsangthong, S. Niemcharoen, A. Poyai, W. Titiroongruang, "Defects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction", Materials Science Forum, Vol. 695, pp. 569-572, 2011
Online since
July 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jing Chen, Yong Shen Liu, Yan Yan Zhu
Chapter 3: Mechanical Dynamics and its Applications
Abstract:We have observed a hump structure in reverse current-voltage curve of n+/p shallow diode for both area and perimeter structures fabricated...
553
Authors: Itsara Srithanachai, Surada Ueamanapong, Poopol Rujanapich, Amporn Poyai, Surasak Niemcharoen, Wisut Titiroongruang
Abstract:An effect induced by x-ray irradiation on Boron-doped crystalline Si at room temperature was closely investigated in this paper. Irradiation...
561
Authors: Siddarth Sundaresan, Brian Grummel, Dean Hamilton, Ranbir Singh
Chapter IV: SiC Devices and Circuits
Abstract:SiC Junction Transistors (SJTs) with 1900 V Drain-Source breakdown voltages, current gain (hFE) higher than 120 and low...
822
Authors: Maurizio Puzzanghera, Roberta Nipoti
4.1 Diodes (SBDs, JBS, PiN, ...)
Abstract:The temperature dependence of the bulk and periphery forward current components of vertical 4H-SiC p+-i-n diodes, with...
773