Paper Title:
A Study on the Characteristics of the Polycrystalline Silicon Annealed by the SHG Nd:YAG Laser
  Abstract

We have annealed the thin layer of the amorphous silicon (a-Si) using the Q-swtiched Nd:YAG laser pulses in order to transform the a-Si into polycrystalline silicon (poly-Si) and investigated the crystalline structures of the poly-Si. Before illuminating the light to the layer, the frequency of the laser was doubled through the second harmonic generation (SHG) process to enhance the absorption efficiency of the optical energy. When the optical energy was higher than 500 mJ/cm2, we could obtain the micro-crystalline structure with grain size as large as 500 nm.

  Info
Periodical
Edited by
Hyungsun Kim, Jian Feng Yang, Chuleol Hee Han, Somchai Thongtem and Soo Wohn Lee
Pages
9-12
DOI
10.4028/www.scientific.net/MSF.695.9
Citation
Y. C. Kim, D. W. Kim, H. S. Kim, S. J. Ahn, S. J. Ahn, "A Study on the Characteristics of the Polycrystalline Silicon Annealed by the SHG Nd:YAG Laser", Materials Science Forum, Vol. 695, pp. 9-12, 2011
Online since
July 2011
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