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A Study on the Characteristics of the Polycrystalline Silicon Annealed by the SHG Nd:YAG Laser

Journal Materials Science Forum (Volume 695)
Volume Eco-Materials Processing and Design XII
Edited by Hyungsun Kim, Jian Feng Yang, Chuleol Hee Han, Somchai Thongtem and Soo Wohn Lee
Pages 9-12
DOI 10.4028/www.scientific.net/MSF.695.9
Citation Young Chul Kim et al., 2011, Materials Science Forum, 695, 9
Online since July, 2011
Authors Young Chul Kim, Dae Wook Kim, Ho Seob Kim, Seong Joon Ahn, Seung Joon Ahn
Keywords Amorphous, Energy Density, Laser Annealing, Micro-Crystalline Structure, Polycrystalline Silicon, Second Harmonic Generation
Abstract

We have annealed the thin layer of the amorphous silicon (a-Si) using the Q-swtiched Nd:YAG laser pulses in order to transform the a-Si into polycrystalline silicon (poly-Si) and investigated the crystalline structures of the poly-Si. Before illuminating the light to the layer, the frequency of the laser was doubled through the second harmonic generation (SHG) process to enhance the absorption efficiency of the optical energy. When the optical energy was higher than 500 mJ/cm2, we could obtain the micro-crystalline structure with grain size as large as 500 nm.

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