Paper Title:
Molecular Dynamics Simulation of Al2O3-SiC Interface
  Abstract

The interfacial energy and diffusion phenomenon of the Al2O3(012)-SiC (011) interface model are studied based on molecular dynamics. The interfacial energy increases firstly until reaches its maximum 0.459J/m2 at the temperature of 1500K and then decreases. The relationship of diffusion coefficients for each kind of atoms is C>Si>O>Al. Diffusion coefficients of atoms increase at first and then decrease as the temperature goes up. This indicates the diffusion mechanism has been changed during the temperature rising process.

  Info
Periodical
Materials Science Forum (Volumes 697-698)
Chapter
I. Advanced Manufacturing Technology and Equipment
Edited by
Tian Huang, Dawei Zhang, Bin Lin, Anping Xu, Yanling Tian and Weiguo Gao
Pages
192-197
DOI
10.4028/www.scientific.net/MSF.697-698.192
Citation
T. T. Zhou, C. Z. Huang, H. L. Liu, B. Zou, H. T. Zhu, "Molecular Dynamics Simulation of Al2O3-SiC Interface", Materials Science Forum, Vols. 697-698, pp. 192-197, 2012
Online since
September 2011
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Price
$32.00
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