Paper Title:
Growth and Transport Properties of Sr-Doped Lanthanum Titanate Thin Films on LaAlO3
  Abstract

Sr-doped LaTiO3 (SLTO) thin epitaxial films on LaAlO3 (100) have been fabricated by the off-axis rf magnetron co-sputtering system. The dopant Sr2+ ions were expected substituting La3+ ions in the films to introduce the hole carriers. The X-ray diffraction shows that the [001] direction of the SLTO films is perpendicular to the substrate surface. The in-situ grown specimens were measured the temperature dependence of resistivity and the Hall coefficients to study the transport properties. The Hall measurements show that the carrier is electron for Sr-doping over 16%. The temperature dependence of the resistance shows that the n-type films are metallic and deviate from free electron gas model obviously. We found the behaviour could be well described by the small-polaron coherent motion model.

  Info
Periodical
Edited by
B. J. Ruck and T. Kemmitt
Pages
41-44
DOI
10.4028/www.scientific.net/MSF.700.41
Citation
H. H. Sung, J. T. Tsai, C. H. Lin, S. Y. Chen, J. C. Fan, C. R. Lin, "Growth and Transport Properties of Sr-Doped Lanthanum Titanate Thin Films on LaAlO3", Materials Science Forum, Vol. 700, pp. 41-44, 2012
Online since
September 2011
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