Paper Title:

Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films

Periodical Materials Science Forum (Volume 700)
Main Theme Advanced Materials and Nanotechnology
Edited by B. J. Ruck and T. Kemmitt
Pages 49-52
DOI 10.4028/www.scientific.net/MSF.700.49
Citation Peter P. Murmu et al., 2011, Materials Science Forum, 700, 49
Online since September, 2011
Authors Peter P. Murmu, John V. Kennedy, Ben J. Ruck, Andreas Markwitz
Keywords AFM, Carrier Concentration, Ion Beam Sputtering, Resistivity, X-Ray Diffraction (XRD), Zinc Oxide (ZnO)
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Abstract

We report the structural and electrical properties of ion beam sputtered ZnO films vacuum annealed at varying temperatures. XRD results revealed that the films grow along the c-axis. The crystallite sizes increase from ~8 to ~30 nm upon annealing at 800 ºC. Annealing aided to recover the compressive strain and regain the standard lattice parameter values. The RMS surface roughness increased to ~5.0 nm after annealing at 800 ºC as observed in AFM micrographs. Increased resistivity on the annealed films suggested that the oxygen vacancies are compensated by de-trapped oxygen at grain boundaries.