Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films
| Periodical | Materials Science Forum (Volume 700) |
|---|---|
| Main Theme | Advanced Materials and Nanotechnology |
| Edited by | B. J. Ruck and T. Kemmitt |
| Pages | 49-52 |
| DOI | 10.4028/www.scientific.net/MSF.700.49 |
| Citation | Peter P. Murmu et al., 2011, Materials Science Forum, 700, 49 |
| Online since | September, 2011 |
| Authors | Peter P. Murmu, John V. Kennedy, Ben J. Ruck, Andreas Markwitz |
| Keywords | AFM, Carrier Concentration, Ion Beam Sputtering, Resistivity, X-Ray Diffraction (XRD), Zinc Oxide (ZnO) |
| Price | US$ 28,- |
We report the structural and electrical properties of ion beam sputtered ZnO films vacuum annealed at varying temperatures. XRD results revealed that the films grow along the c-axis. The crystallite sizes increase from ~8 to ~30 nm upon annealing at 800 ºC. Annealing aided to recover the compressive strain and regain the standard lattice parameter values. The RMS surface roughness increased to ~5.0 nm after annealing at 800 ºC as observed in AFM micrographs. Increased resistivity on the annealed films suggested that the oxygen vacancies are compensated by de-trapped oxygen at grain boundaries.