Paper Title:
Effect of Thermal Annealing on Electrical Properties of Si-LiNbO3
  Abstract

The substructure and electrical properties of the films with the thickness up to 2.0 µm deposited on Si by the methods of the radio frequency magnetron and ion-beam sputtering of a LiNbO3 target have been investigated. It has been established that in thermally annealed samples an activated conduction mechanism with variable jump distance takes place. As a result of thermal annealing a decrease in the charge localization centers (CLC) in the LiNbO3 films from Nt=3·1018cm-3 to Nt=3·1016cm-3 occurs.

  Info
Periodical
Edited by
B. J. Ruck and T. Kemmitt
Pages
53-57
DOI
10.4028/www.scientific.net/MSF.700.53
Citation
V. M. Ievlev, M. P. Sumets, A. V. Kostyuchenko, "Effect of Thermal Annealing on Electrical Properties of Si-LiNbO3", Materials Science Forum, Vol. 700, pp. 53-57, 2012
Online since
September 2011
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