Paper Title:
Epitaxial Growth of α-Fe2O3 Thin Films on c-Plane Sapphire Substrate by Hydrothermal Method
  Abstract

Thin films of hematite find extensive applications in photoelectrochemistry, photocatalysis, and gas sensors. c-axis oriented hematite films have been directly grown on c-plane sapphire substrate using chemical method via hydrolysis of ferric cations. X-ray diffraction (XRD) reveals that the crystalline phases of the films and corresponding sediment produced in the solution were α-Fe2O3 and pure β-FeOOH, demonstrating the promotion of nucleation of hematite on sapphire substrate as a result of lowered interface energy. Phi-scan results indicate that the hematite films are grown with (0001) planes parallel to c-plane of Al2O3. Scanning electron microscopic observation shows that the hematite films are composed of pyramid-shaped nanocrystals with smooth surface facets.

  Info
Periodical
Materials Science Forum (Volumes 702-703)
Chapter
Chapter 6: Materials
Edited by
Asim Tewari, Satyam Suwas, Dinesh Srivastava, Indradev Samajdar and Arunansu Haldar
Pages
999-1002
DOI
10.4028/www.scientific.net/MSF.702-703.999
Citation
S. Li, G. W. Qin, L. Zuo, "Epitaxial Growth of α-Fe2O3 Thin Films on c-Plane Sapphire Substrate by Hydrothermal Method", Materials Science Forum, Vols. 702-703, pp. 999-1002, 2012
Online since
December 2011
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Price
$32.00
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Chapter 7: Nanomaterials and Nanotechnologies
Abstract:This paper reports on the synthesis of iron oxide nanowires using thermal oxidation of iron. The α-Fe2O3 (hematite) and...
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