CVD Growth of 3C-SiC on 4H-SiC Substrate
| Periodical | Materials Science Forum (Volume 711) |
|---|---|
| Main Theme | HeteroSiC & WASMPE 2011 |
| Edited by | Daniel Alquier |
| Pages | 16-21 |
| DOI | 10.4028/www.scientific.net/MSF.711.16 |
| Citation | Anne Henry et al., 2012, Materials Science Forum, 711, 16 |
| Online since | January, 2012 |
| Authors | Anne Henry, Xun Li, Stefano Leone, Olof Kordina, Erik Janzén |
| Keywords | 3C/4H, CVD, Double-Position-Boundaries, Layer Morphology |
| Price | US$ 28,- |
The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 1350 °C. The ramp up-conditions and the gas-ambient atmosphere when the temperature increases are key factors for the quality of the obtained 3C layers. The best pre-growth ambient found is carbon rich environment; however time of this pre-treatment is crucial. A too high C/Si ratio during growth led to polycrystalline material whereas for too low C/Si ratios Si cluster formation is observed on the surface. The addition of nitrogen gas is also explored.
