Paper Title:
Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
| Periodical | Materials Science Forum (Volume 711) |
|---|---|
| Main Theme | HeteroSiC & WASMPE 2011 |
| Edited by | Daniel Alquier |
| Pages | 31-34 |
| DOI | 10.4028/www.scientific.net/MSF.711.31 |
| Citation | Andrea Severino et al., 2012, Materials Science Forum, 711, 31 |
| Online since | January, 2012 |
| Authors | Andrea Severino, Massimo Camarda, Antonino La Magna, Francesco La Via |
| Keywords | 3C-SiC Lattice Parameters, Temperature Effect, XRD Measurements |
| Price | US$ 28,- |
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Abstract
3C-SiC lattice parameters, both in-plane and out-of-plane, have been studied as a function of the temperature (up to 773 K) by performing X-Ray Diffraction (XRD) measurements in coplanar and non-coplanar geometry during the thermal treatments. A tetragonal distortion of the 3C-SiC cell has been observed, with a=b≠c, resulting from a tensile stress status induced by the presence of Si substrate. A linear expansion coefficient of about 4.404 × 10-6 K-1 at 773 K has been obtained for a 15 μm thick 3C-SiC film grown on (100) Si substrate. The discrepancy with the value reported in literature of 5.05 × 10-6 K-1 at 800 K [Slack et al., Journal of Applied Physics 46, 89 (1975)] may be related to the different nature of samples used.
