Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma
| Periodical | Materials Science Forum (Volume 711) |
|---|---|
| Main Theme | HeteroSiC & WASMPE 2011 |
| Edited by | Daniel Alquier |
| Pages | 66-69 |
| DOI | 10.4028/www.scientific.net/MSF.711.66 |
| Citation | Ji Hoon Choi et al., 2012, Materials Science Forum, 711, 66 |
| Online since | January, 2012 |
| Authors | Ji Hoon Choi, Laurence Latu-Romain, Florian Dhalluin, Thierry Chevolleau, Bassem Salem, Thierry Baron, Didier Chaussende, Edwige Bano |
| Keywords | Dry Plasma Etch, Inductively Coupled Plasma Etching, Silicon Carbide (SiC) |
| Price | US$ 28,- |
A top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars has been demonstrated by using inductively coupled SF6/O2 plasma etching. At optimal etching conditions, the obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni).