Paper Title:

Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma

Periodical Materials Science Forum (Volume 711)
Main Theme HeteroSiC & WASMPE 2011
Edited by Daniel Alquier
Pages 66-69
DOI 10.4028/www.scientific.net/MSF.711.66
Citation Ji Hoon Choi et al., 2012, Materials Science Forum, 711, 66
Online since January, 2012
Authors Ji Hoon Choi, Laurence Latu-Romain, Florian Dhalluin, Thierry Chevolleau, Bassem Salem, Thierry Baron, Didier Chaussende, Edwige Bano
Keywords Dry Plasma Etch, Inductively Coupled Plasma Etching, Silicon Carbide (SiC)
Price US$ 28,-
Article Preview
View full size
Abstract

A top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars has been demonstrated by using inductively coupled SF6/O2 plasma etching. At optimal etching conditions, the obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni).