Paper Title:
High Performance SiC IEMOSFET/SBD Module
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 1053-1058 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.1053 |
| Citation | Shinsuke Harada et al., 2012, Materials Science Forum, 717-720, 1053 |
| Online since | May, 2012 |
| Authors | Shinsuke Harada, Yasuyuki Hoshi, Yuichi Harada, Takashi Tsuji, Akimasa Kinoshita, Mitsuo Okamoto, Youichi Makifuchi, Yasuyuki Kawada, Kouji Imamura, Masahide Gotoh, Takeshi Tawara, Shinichi Nakamata, T. Sakai, Fumikazu Imai, Naoyuki Ohse, Mina Ryo, Atsushi Tanaka, Kazuo Tezuka, Tatsurou Tsuyuki, Saburou Shimizu, Noriyuki Iwamuro, Yoshiyuki Sakai, Hiroshi Kimura, Kenji Fukuda, Hajime Okumura |
| Keywords | Channel Mobility, Gate Oxide, IEMOSFET, MOSFET, Power Module, Reliability, SBD |
| Price | US$ 28,- |
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Abstract
SiC power module with low loss and high reliability was developed by utilizing IEMOSFET and SBD. The IEMOSFET is the SiC MOSFET with high channel mobility in which the channel region is the p-type carbon-face epitaxial layer with low acceptor concentration. Elemental technologies for the high channel mobility and the high reliability of the gate oxide have been developed to realize the excellent characteristics by the IEMOSFET. The SBD was designed so as to minimize the forward voltage drops and the reverse leakage current. For the fabrication of these SiC power devices, the mass production technology such as gate oxidation, ion implantation and following activation annealing have been also developed.
