An Investigation of Material Limit Characteristics of SiC IGBTs
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 1143-1146 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.1143 |
| Citation | Tetsuo Hatakeyama et al., 2012, Materials Science Forum, 717-720, 1143 |
| Online since | May, 2012 |
| Authors | Tetsuo Hatakeyama, Kenji Fukuda, Hajime Okumura |
| Keywords | FS-IGBT, HIGT, Hole Barrier, IEGT, IGBT, MOS, PiN Diode |
| Price | US$ 28,- |
The impact of device concepts of Si insulated gate bipolar transistors (IGBTs) such as injection-enhanced IGBT (IEGT), high-conductivity IGBT (HiGT), and Si-limit IGBT on the performance of SiC IGBTs is examined. We first show that the forward characteristics of the original type of planer SiC IGBTs are much worse than those of SiC PiN diodes, even if the carrier lifetime is improved. Next, we show that the forward characteristics of SiC IEGTs and SiC HiGTs are comparable to those of SiC PiN diodes. Thus, device concepts of Si IGBTs are effective in improving the device performance of SiC IGBTs. Finally, it is shown that a SiC-limit IGBT can be realized when the mesa width is less than 0.5 μm.