Paper Title:
300C Capable Digital Integrated Circuits in SiC Technology
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 1261-1264 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.1261 |
| Citation | Amita Patil et al., 2012, Materials Science Forum, 717-720, 1261 |
| Online since | May, 2012 |
| Authors | Amita Patil, Naresh Rao, Vinayak Tilak |
| Keywords | High Temperature Integrated Circuit (IC), High Temperature Techniques, n-Channel MOS IC, Silicon Carbide (SiC), Wide Band Gap Semiconductor IC |
| Price | US$ 28,- |
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Abstract
This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register and ripple counter. All circuits are functional from room temperature up to 300C without any notable degradation in performance at elevated temperature. The 4-bit counter demonstrated stable behavior for over 500 hours of continuous operation at 300C.
