Paper Title:
Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 1323-1326 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.1323 |
| Citation | M. Guziewicz et al., 2012, Materials Science Forum, 717-720, 1323 |
| Online since | May, 2012 |
| Authors | M. Guziewicz, W. Jung, R. Kruszka, J. Domagala, Ania Piotrowska, K. Gołaszewska, L. Wachnicki, E. Guziewicz, M. Godlewski |
| Keywords | Atomic Layer Deposition (ALD), Heterojunction, Impedance Spectroscopy, ZnO-SiC Diode |
| Price | US$ 28,- |
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Abstract
ZnO as well as SiC are wide bangap materials with prospective electronic applications. Very good lattice matching of the materials allowed formation a n-ZnO/p-SiC heteroepitaxial junction. The n˗ZnO film was epitaxially grown onto the p-SiC substrate using the atomic layer deposition method. The fabricated p-n diode was studied by I-V and C-V characteristics as well as by impedance spectroscopy. The diode shows a high rectifying ratio of 107 and an ideality factor of 1.21.
