Paper Title:

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

Periodical Materials Science Forum (Volumes 717 - 720)
Main Theme Silicon Carbide and Related Materials 2011
Chapter Chapter 3: Physical Properties and Characterization of SiC
Edited by Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages 233-236
DOI 10.4028/www.scientific.net/MSF.717-720.233
Citation Yi Yu Ou et al., 2012, Materials Science Forum, 717-720, 233
Online since May 2012
Authors Yi Yu Ou, Valdas Jokubavicius, Chuan Liu, Rolf W. Berg, Margareta K. Linnarsson, Satoshi Kamiyama, Zhao Yue Lu, Rositza Yakimova, Mikael Syväjärvi, Hai Yan Ou
Keywords 6H-SiC, Donor-Acceptor Pair Emission, Photoluminescence (PL), Raman Microscopy, Sublimation Epitaxy
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Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.