Paper Title:
Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

Materials Science Forum (Volumes 717-720)
Chapter 3: Physical Properties and Characterization of SiC
Edited by
Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Y. Y. Ou, V. Jokubavicius, C. Liu, R. W. Berg, M. K. Linnarsson, S. Kamiyama, Z. Y. Lu, R. Yakimova, M. Syväjärvi, H. Y. Ou, "Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide", Materials Science Forum, Vols 717-720, pp. 233-236, May. 2012
Online since
May 2012
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Authors: Satoshi Murata, Yoshihiro Nakamura, Tomohiko Maeda, Yoko Shibata, Mina Ikuta, Masaaki Sugiura, Shugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita
Abstract:The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated....
Authors: Bharat Krishnan, Sashi Kumar Chanda, Yaroslav Koshka
Abstract:The room-temperature photoluminescence (RTPL) was investigated in commercial nitrogen-doped 4H-SiC substrates. In a typical RTPL spectrum of...
Authors: Georgios Zoulis, Jian Wu Sun, Milena Beshkova, Remigijus Vasiliauskas, Sandrine Juillaguet, Hervé Peyre, Mikael Syväjärvi, Rositza Yakimova, Jean Camassel
Abstract:Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature...