Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 25-28 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.25 |
| Citation | Koichi Kakimoto et al., 2012, Materials Science Forum, 717-720, 25 |
| Online since | May, 2012 |
| Authors | Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shin Ichi Nishizawa |
| Keywords | Computer Simulation, Growth from Vapor, Heat Transfer, Substrate |
| Price | US$ 28,- |
Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including compressible effect, convection and buoyancy effects, flow coupling between argon gas and species, and the Stefan effect. Calculation in 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that the origin of diffusion resistance reported so far was the effect of convection of argon gas and chemical species.