Paper Title:

Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method

Periodical Materials Science Forum (Volumes 717 - 720)
Main Theme Silicon Carbide and Related Materials 2011
Edited by Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages 25-28
DOI 10.4028/www.scientific.net/MSF.717-720.25
Citation Koichi Kakimoto et al., 2012, Materials Science Forum, 717-720, 25
Online since May, 2012
Authors Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shin Ichi Nishizawa
Keywords Computer Simulation, Growth from Vapor, Heat Transfer, Substrate
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Abstract

Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including compressible effect, convection and buoyancy effects, flow coupling between argon gas and species, and the Stefan effect. Calculation in 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that the origin of diffusion resistance reported so far was the effect of convection of argon gas and chemical species.