Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?

Pensl, Gerhard; Kimoto, Tsunenobu; Krieger, Michael; Weber, Heiko B.; Zippelius, Bernd; Glas, Alexander

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Paper Titles

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide, p.233
Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC, p.237
Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model, p.241
On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps, p.247
Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?, p.251
Excitation Properties of Silicon Vacancy in Silicon Carbide, p.255
Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy, p.259
Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC, p.263
Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency, p.267

Home > Materials Science Forum > Silicon Carbide and Related Materials 2011 > Z_1/2- and EH₆-Center in...

Paper Title:

Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?

Periodical	Materials Science Forum (Volumes 717 - 720)
Main Theme	Silicon Carbide and Related Materials 2011
Edited by	Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages	251-254
DOI	10.4028/www.scientific.net/MSF.717-720.251
Citation	Bernd Zippelius et al., 2012, Materials Science Forum, 717-720, 251
Online since	May, 2012
Authors	Bernd Zippelius, Alexander Glas, Heiko B. Weber, Gerhard Pensl, Tsunenobu Kimoto, Michael Krieger
Keywords	Charge State, Deep Level Transient Spectroscopy, DLTS, EH_6/7, Intrinsic Point Defects, Poole-Frenkel Effect, Z_1/2
Price	US$ 28,-

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Abstract

Deep Level Transient Spectroscopy (DLTS) and Double-correlated DLTS (DDLTS) measurements have been conducted on Schottky contacts fabricated on n-type 4H-SiC epilayers using different contact metals in order to separate the EH₆- and EH₇-centers, which usually appear as a broad double peak in DLTS spectra. The activation energy of EH₆ (E_C - E_T(EH₆) = 1.203 eV) turns out to be independent of the electric field. As a consequence, EH₆ is acceptor-like according to the missing Poole-Frenkel effect. Therefore, it can be excluded that the EH₆-center and the prominent acceptor-like Z_1/2-center belong to different charge states of the same microscopic defect as theoretically suggested. It is proposed that EH₆ is a complex containing a carbon vacancy and another component available at high concentrations. The activation energy of EH₇ (E_C - E_T(EH₇) = 1.58 eV) has been evaluated indirectly by fitting the DLTS spectra of the EH_6/7 double peak taking the previously determined parameters of EH₆ into account.