Paper Title:
Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 267-270 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.267 |
| Citation | Naoya Iwamoto et al., 2012, Materials Science Forum, 717-720, 267 |
| Online since | May, 2012 |
| Authors | Naoya Iwamoto, Atsushi Koizumi, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, S. Koike, Kazuo Uchida, Shinji Nozaki |
| Keywords | Alpha Particles, Charge Collection, Charge Transient Spectroscopy, Defect, Electron Irradiation, Particle Detector |
| Price | US$ 28,- |
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Abstract
Defects in electron-irradiated 6H-SiC diodes have been studied by single alpha particle induced charge transient spectroscopy and deep level transient spectroscopy (DLTS) in order to identify critical defects responsible for the charge collection efficiency (CCE) decreased by high-energy electron irradiation. The defect X2 detected by the charge transient spectroscopy and the electron trap Ei detected by the DLTS had a similar activation energy of around 0.50 eV. In addition, the annealing at 200oC completely removed defects X2 and Ei, and restored the CCE. The defect X2 is attributed to the electron trap Ei, and responsible for the decreased CCE.
