Paper Title:
Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 275-278 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.275 |
| Citation | János Mizsei et al., 2012, Materials Science Forum, 717-720, 275 |
| Online since | May, 2012 |
| Authors | János Mizsei, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu, Toomas Rang |
| Keywords | Deep Level, Diffusion Welding, DLTS Measurements, Kelvin Probe, Surface States |
| Price | US$ 28,- |
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Abstract
This paper is a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the Kelvin Probe method has shown an increase in the density of surface states after the diffusion welding from 2x1015 cm-2 to 3.5x1016 cm-2.
