Paper Title:
Status of Large Diameter SiC Single Crystals
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 3-8 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.3 |
| Citation | Avinash K. Gupta et al., 2012, Materials Science Forum, 717-720, 3 |
| Online since | May, 2012 |
| Authors | Avinash K. Gupta, Ping Wu, Varatharajan Rengarajan, Xue Ping Xu, Murugesu Yoganathan, Christ Martin, Ejiro Emorhokpor, Andy Souzis, Ilya Zwieback, Tom Anderson |
| Keywords | Bulk Crystal Growth, Crystal Defects, Dislocation, Polytype Conversion, Sublimation |
| Price | US$ 28,- |
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Abstract
Large-diameter SiC single crystals are grown at II-VI by the sublimation technique. 100mm substrates of semi-insulating 6H SiC and n-type 4H SiC are produced as commercial products; in development, diameter expansion to 125mm has been achieved. Over the last two years, significant improvements have been made in crystal quality. The values of FWHM of x-ray rocking curves are typically 20-40 arc-seconds for 6H SI wafers and 12-30 arc-seconds for 4H n+ wafers. Micropipe density is less than 3 cm-2, and less than 0.1 cm-2 in best substrates. Electrical resistivity of SI substrates is, typically, of 1011 Ω•cm or above. For 4H n+ substrates, the typical dislocation density is about 9×103 cm-2 and the typical BPD density is less than 1×103 cm-2.
