Paper Title:
Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 33-36 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.33 |
| Citation | Andrew J. Trunek et al., 2012, Materials Science Forum, 717-720, 33 |
| Online since | May, 2012 |
| Authors | Andrew J. Trunek, Philip G. Neudeck, Andrew A. Woodworth, J. Anthony Powell, David J. Spry, Balaji Raghothamachar, Michael Dudley |
| Keywords | A-Face, A-Plane, CVD, Epitaxy, Hot Wall, M-Face, M-Plane |
| Price | US$ 28,- |
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Abstract
Lateral expansion of small mixed polytype 4H/6H-SiC and 6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented (11 ̅00) SiC boule slices containing regions of 4H and 6H-SiC or just single polytype 6H-SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 μm (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms, that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.
