Paper Title:
Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC
  Abstract

4H-SiC intrinsic homoepitaxied single crystals have been nano indented at room temperature using a spherical indentor and the related deformation microstructures have been analyzed by Transmission Electron Microscopy. Dislocations are lying in the basal plane but have been found to be perfect, in contrast with observations made at higher temperature. Although such a change in deformation mechanism has been observed in other semiconductors such as Silicon and Indium Antimonide, it was unexpected in a very low stacking fault material such as SiC.

  Info
Periodical
Materials Science Forum (Volumes 717-720)
Chapter
Chapter 3: Physical Properties and Characterization of SiC
Edited by
Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages
339-342
DOI
10.4028/www.scientific.net/MSF.717-720.339
Citation
J. L. Demenet, M. Amer, C. Tromas, J. Rabier, "Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC", Materials Science Forum, Vols. 717-720, pp. 339-342, 2012
Online since
May 2012
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Price
$32.00
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