Paper Title:
Control of Void Formation in 4H-SiC Solution Growth
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 57-60 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.57 |
| Citation | Takeshi Mitani et al., 2012, Materials Science Forum, 717-720, 57 |
| Online since | May, 2012 |
| Authors | Takeshi Mitani, Masayuki Okamura, Tetsuo Takahashi, Naoyoshi Komatsu, Tomohisa Kato, Hajime Okumura |
| Keywords | Macro-Defect, Solution Growth, Void |
| Price | US$ 28,- |
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Abstract
Void formation in 4H-SiC crystals grown from solution has been investigated by secondary ion mass spectrometry and Raman scattering. It becomes clear that ambient Ar gas is filled in voids and the solvent (Si) partially remains. The result indicates that Ar dissolved in the solvent vaporizes and forms bubbles. The trapped bubbles at the crystal growth front are considered to be incorporated in the growing crystal as voids. We also have developed following methods for suppression of the void formation; (1) dipping seed crystals so that the growth front faces upward, (2) growth under He atmosphere, and (3) the high temperature treatment of the solvent before crystal growth.
