The Registry of Graphene Layers Grown on SiC(000-1).
|Periodical||Materials Science Forum (Volumes 717 - 720)|
|Main Theme||Silicon Carbide and Related Materials 2011|
|Edited by||Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck|
|Citation||Leif I. Johansson et al., 2012, Materials Science Forum, 717-720, 613|
|Online since||May, 2012|
|Authors||Leif I. Johansson, Somsakul Watcharinyanon, Alexei A. Zakharov, Rositza Yakimova, Chariya Virojanadara|
|Keywords||ARPES, C-Face SiC, Graphen, LEEM, Ordered Grains, XPEEM, μ-LEED|
Graphene samples were grown on the C-face of SiC, at high temperature in a furnace and an Ar ambient, and were investigated using LEEM, XPEEM, LEED, XPS and ARPES. Formation of fairly large grains (crystallographic domains) of graphene exhibiting sharp 1x1 patterns in m-LEED was revealed and that different grains showed different azimuthal orientations. Selective area constant initial energy photoelectron angular distribution patterns recorded showed the same results, ordered grains and no rotational disorder between adjacent layers. A grain size of up to a few mm was obtained on some samples.