Paper Title:
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
  Abstract

We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6Ö3´6Ö3)-30° interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.

  Info
Periodical
Materials Science Forum (Volumes 717-720)
Chapter
Chapter 4: Graphene
Edited by
Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages
625-628
DOI
10.4028/www.scientific.net/MSF.717-720.625
Citation
A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, J. Camassel, "Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)", Materials Science Forum, Vols. 717-720, pp. 625-628, May. 2012
Online since
May 2012
Keywords
Price
US$ 28,-
Share
Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski
Abstract:The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...
199
Authors: Ameer Al-Temimy, Christian Riedl, Ulrich Starke
Abstract:By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower...
593
Authors: Rami Khazaka, Marc Portail, P. Vennéguès, Marcin Zielinski, Thierry Chassagne, Daniel Alquier, Jean François Michaud
Chapter V: Related Materials
Abstract:We evaluate the influence of the growth parameters on the crystal quality of Si films grown by chemical vapor deposition on 3C-SiC(001)/Si...
978