Paper Title:

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

Periodical Materials Science Forum (Volumes 717 - 720)
Main Theme Silicon Carbide and Related Materials 2011
Chapter Chapter 4: Graphene
Edited by Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages 625-628
DOI 10.4028/www.scientific.net/MSF.717-720.625
Citation Adrien Michon et al., 2012, Materials Science Forum, 717-720, 625
Online since May, 2012
Authors Adrien Michon, Elodie Roudon, Marc Portail, Benoit Jouault, Sylvie Contreras, Sébastien Chenot, Yvon Cordier, Denis Lefebvre, Stephane Vézian, Marcin Zielinski, Thierry Chassagne, Jean Camassel
Keywords 3C-SiC/Si, 6H-SiC, CVD, Graphen
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We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6Ö3´6Ö3)-30° interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.

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