Paper Title:
Effects of N Incorporation on Electron Traps at SiO2/SiC Interfaces
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 717-720 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.717 |
| Citation | Alberto F. Basile et al., 2012, Materials Science Forum, 717-720, 717 |
| Online since | May, 2012 |
| Authors | Alberto F. Basile, Sarit Dhar, John R. Williams, Leonard C. Feldman, Patricia M. Mooney |
| Keywords | 4H-SiC MOS, C-V, DLTS, Electron Trapping, Interface States, SiO2/SiC, Tunneling |
| Price | US$ 28,- |
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Abstract
Temperature dependent capacitance-voltage (C-V) and constant capacitance transient spectroscopy (CCDLTS) measurements have been performed to investigate the role of N in improving the transport properties of 4H-SiC MOS transistors. The higher channel mobility in the N pre-implanted transistors is due at least in part to activation of a small fraction of the implanted N near the SiO2/SiC interface as donors in SiC during oxidation, thus reducing the effects of interface trapping. In addition, the absence of oxidation-induced near-interface defects, which were observed in NO-annealed capacitors, may contribute to the improved mobility in N pre-implanted transistors.
