A Fully Electrically Isolated Package for High Temperature SiC Sensors
| Periodical | Materials Science Forum (Volumes 717 - 720) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2011 |
| Edited by | Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck |
| Pages | 925-928 |
| DOI | 10.4028/www.scientific.net/MSF.717-720.925 |
| Citation | Gheorghe Brezeanu et al., 2012, Materials Science Forum, 717-720, 925 |
| Online since | May, 2012 |
| Authors | Gheorghe Brezeanu, Florin Draghici, Marian Badila, Ion Rusu, Florin Bernea, Phillippe Godignon |
| Keywords | High Temperature, Package, Schottky Diode, Sensor, Temperature Cycling |
| Price | US$ 28,- |
A fully electrically isolated package for a SiC temperature sensor, able to work at high temperature, is presented in this paper. The adopted packaging solution was tested under thermal stress by varying the temperature between 300C and 400C (for 500 cycles) and between 50C and 400C (for other 500 cycles). The thermal stress had negligible effect on the capsules leakage currents (measured from the sensor terminals to the package metal casing) and did not degrade the glass which ensures the sealing of the capsule. The measurements and microphysical investigations showed a stable operation of the package up to temperatures of 400C.