Paper Title:

A Fully Electrically Isolated Package for High Temperature SiC Sensors

Periodical Materials Science Forum (Volumes 717 - 720)
Main Theme Silicon Carbide and Related Materials 2011
Edited by Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages 925-928
DOI 10.4028/www.scientific.net/MSF.717-720.925
Citation Gheorghe Brezeanu et al., 2012, Materials Science Forum, 717-720, 925
Online since May, 2012
Authors Gheorghe Brezeanu, Florin Draghici, Marian Badila, Ion Rusu, Florin Bernea, Phillippe Godignon
Keywords High Temperature, Package, Schottky Diode, Sensor, Temperature Cycling
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Abstract

A fully electrically isolated package for a SiC temperature sensor, able to work at high temperature, is presented in this paper. The adopted packaging solution was tested under thermal stress by varying the temperature between 300C and 400C (for 500 cycles) and between 50C and 400C (for other 500 cycles). The thermal stress had negligible effect on the capsules leakage currents (measured from the sensor terminals to the package metal casing) and did not degrade the glass which ensures the sealing of the capsule. The measurements and microphysical investigations showed a stable operation of the package up to temperatures of 400C.