Paper Title:

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes

Periodical Materials Science Forum (Volumes 717 - 720)
Main Theme Silicon Carbide and Related Materials 2011
Edited by Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages 973-976
DOI 10.4028/www.scientific.net/MSF.717-720.973
Citation Hiroki Niwa et al., 2012, Materials Science Forum, 717-720, 973
Online since May, 2012
Authors Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto
Keywords Breakdown, Interface Charges, Junction Termination Extension (JTE), PiN Diode
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Abstract

Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone JTE and Space-Modulated JTE (SM-JTE), a breakdown voltage over 15 kV, corresponding to about 93 % of the parallel-plane breakdown voltage, was realized. The window of optimum JTE dose to obtain high breakdown voltage was widened, which indicates the robustness to the deviation of JTE dose. By comparing the breakdown voltage obtained by simulation and experimental results, impacts of the charge near the SiO2/SiC interface are discussed.