Silicon Carbide and Related Materials 2011
| Paper Title | Page |
|---|---|
|
Bulk and Surface Effects on the Polytype Stability in SiC Crystals Authors: Frédéric Mercier, Shinichi Nishizawa |
41 |
|
Authors: Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyuki Yashiro, Nobuhiro Okada, Koji Moriguchi, H. Daikoku, M. Kado, H. Suzuki, H. Sakamoto, T. Bessho |
45 |
|
SiC Growth by Solvent-Laser Heated Floating Zone Authors: Andrew A. Woodworth, Philip G. Neudeck, Ali Sayir, David J. Spry, Andrew J. Trunek, J. Anthony Powell |
49 |
|
Authors: Yuji Yamamoto, Kazuaki Seki, Shigeta Kozawa, Alexander, Shunta Harada, Toru Ujihara |
53 |
|
Control of Void Formation in 4H-SiC Solution Growth Authors: Takeshi Mitani, Masayuki Okamura, Tetsuo Takahashi, Naoyoshi Komatsu, Tomohisa Kato, Hajime Okumura |
57 |
|
Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt Authors: Hironori Daikoku, M. Kado, H. Sakamoto, Hiroshi Suzuki, T. Bessho, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, K. Kamei |
61 |
|
Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH4 Flow Authors: Mamoru Imade, Akito Ishikawa, Yusuke Nakagawa, Masashi Yoshimura, Yasuo Kitaoka, Takatomo Sasaki, Yusuke Mori |
65 |
|
Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent Authors: Julien Lefebure, Jean Marc Dedulle, Thierry Ouisse, Didier Chaussende |
69 |
|
SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor Authors: Albert A. Burk, Denis Tsvetkov, Dan Barnhardt, Michael J. O'Loughlin, Lara Garrett, Paul Towner, Jeff Seaman, Eugene Deyneka, Yuri Khlebnikov, John W. Palmour |
75 |
|
Growth of 4H-SiC Epilayers and Z1/2 Center Elimination Authors: Tetsuya Miyazawa, Hidekazu Tsuchida |
81 |
