Paper Title:

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide

Periodical Materials Science Forum (Volume 725)
Main Theme Defects-Recognition, Imaging and Physics in Semiconductors XIV
Edited by Hiroshi Yamada-Kaneta and Akira Sakai
Pages 19-22
DOI 10.4028/www.scientific.net/MSF.725.19
Citation Tatsuya Okada et al., 2012, Materials Science Forum, 725, 19
Online since July, 2012
Authors Tatsuya Okada, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Ryota Kashino, Takuto Ito
Keywords Femtosecond Laser, Nanovoid, Silicon Carbide (SiC)
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Abstract

Scanning transmission electron microscopy was carried out to study the three-dimensional microstructures of periodic strained layers induced by the irradiation of femtosecond laser pulses inside a silicon carbide single crystal. The cross section of laser-irradiated line consisted of a shell-shaped modified region surrounding a core region with no modification. The laser-modified region was composed of strained layers with a typical spacing of 200 nm. Nanovoids from 10 nm to 20 nm in diameter were observed. Three-dimensional tomographic images clearly show the plate-like shape of strained layers extending parallel to the electric field of the laser light and the random distribution of nanovoids in the strained layers. The three-dimensional observation provides insight into the formation mechanisms of periodic microstructures.