Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
| Periodical | Materials Science Forum (Volume 725) |
|---|---|
| Main Theme | Defects-Recognition, Imaging and Physics in Semiconductors XIV |
| Edited by | Hiroshi Yamada-Kaneta and Akira Sakai |
| Pages | 19-22 |
| DOI | 10.4028/www.scientific.net/MSF.725.19 |
| Citation | Tatsuya Okada et al., 2012, Materials Science Forum, 725, 19 |
| Online since | July, 2012 |
| Authors | Tatsuya Okada, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Ryota Kashino, Takuto Ito |
| Keywords | Femtosecond Laser, Nanovoid, Silicon Carbide (SiC) |
| Price | US$ 28,- |
Scanning transmission electron microscopy was carried out to study the three-dimensional microstructures of periodic strained layers induced by the irradiation of femtosecond laser pulses inside a silicon carbide single crystal. The cross section of laser-irradiated line consisted of a shell-shaped modified region surrounding a core region with no modification. The laser-modified region was composed of strained layers with a typical spacing of 200 nm. Nanovoids from 10 nm to 20 nm in diameter were observed. Three-dimensional tomographic images clearly show the plate-like shape of strained layers extending parallel to the electric field of the laser light and the random distribution of nanovoids in the strained layers. The three-dimensional observation provides insight into the formation mechanisms of periodic microstructures.