Paper Title:

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing

Periodical Materials Science Forum (Volume 725)
Main Theme Defects-Recognition, Imaging and Physics in Semiconductors XIV
Edited by Hiroshi Yamada-Kaneta and Akira Sakai
Pages 23-26
DOI 10.4028/www.scientific.net/MSF.725.23
Citation Yong Zhao Yao et al., 2012, Materials Science Forum, 725, 23
Online since July, 2012
Authors Yong Zhao Yao, Koji Sato, Yoshihiro Sugawara, Yukari Ishikawa, Yoshihiro Okamoto, Noritaka Hayashi
Keywords Electron Beam Induced Current (EBIC), Mechanical Polishing, Off-Cut Angle, Polish Damage, Polish Direction
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Abstract

Electron beam induced current (EBIC) observations have been carried out to investigate the influence of mechanical polishing (MP) direction on the dislocations formation at the Si-face c(0001) of 4H-SiC epitaxial layers. Two opposite MP directions (defined by polish pad moving direction) have been compared, which are [11-20] off-cut directions along step-up and step-down, respectively. It has been found that high density of dislocations have been formed along the polish paths for the 8o off samples with polishing pad moved in step-up direction. By contrast, step-down polishing samples have shown no significant dislocation increase although shallow polish scratches were observed. Similar experiments have also been carried out for 4o off samples, showing step-up MPs introduced more dislocations than step-down ones. The results are discussed in terms of forces along the slip plane [11-20](0001) effectively exerted by the abrasive particles on the steps.