Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
| Periodical | Materials Science Forum (Volume 725) |
|---|---|
| Main Theme | Defects-Recognition, Imaging and Physics in Semiconductors XIV |
| Edited by | Hiroshi Yamada-Kaneta and Akira Sakai |
| Pages | 23-26 |
| DOI | 10.4028/www.scientific.net/MSF.725.23 |
| Citation | Yong Zhao Yao et al., 2012, Materials Science Forum, 725, 23 |
| Online since | July, 2012 |
| Authors | Yong Zhao Yao, Koji Sato, Yoshihiro Sugawara, Yukari Ishikawa, Yoshihiro Okamoto, Noritaka Hayashi |
| Keywords | Electron Beam Induced Current (EBIC), Mechanical Polishing, Off-Cut Angle, Polish Damage, Polish Direction |
| Price | US$ 28,- |
Electron beam induced current (EBIC) observations have been carried out to investigate the influence of mechanical polishing (MP) direction on the dislocations formation at the Si-face c(0001) of 4H-SiC epitaxial layers. Two opposite MP directions (defined by polish pad moving direction) have been compared, which are [11-20] off-cut directions along step-up and step-down, respectively. It has been found that high density of dislocations have been formed along the polish paths for the 8o off samples with polishing pad moved in step-up direction. By contrast, step-down polishing samples have shown no significant dislocation increase although shallow polish scratches were observed. Similar experiments have also been carried out for 4o off samples, showing step-up MPs introduced more dislocations than step-down ones. The results are discussed in terms of forces along the slip plane [11-20](0001) effectively exerted by the abrasive particles on the steps.