Paper Title:
Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
| Periodical | Materials Science Forum (Volume 725) |
|---|---|
| Main Theme | Defects-Recognition, Imaging and Physics in Semiconductors XIV |
| Edited by | Hiroshi Yamada-Kaneta and Akira Sakai |
| Pages | 27-30 |
| DOI | 10.4028/www.scientific.net/MSF.725.27 |
| Citation | Xuan Zhang et al., 2012, Materials Science Forum, 725, 27 |
| Online since | July, 2012 |
| Authors | Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida |
| Keywords | 4H-SiC, Basal Plane Dislocation (BPD), C-Core Partial Dislocation, Doping, Epitaxial Layer, Morphology, Si-Core Partial Dislocation, Stress |
| Price | US$ 28,- |
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Abstract
Morphologies of basal plane dislocations (BPDs) in 4H-SiC epilayers doped with nitrogen or aluminum are explained in detail. While BPDs in low N-doped or Al-doped epilayers show the morphology of gliding dislocations responding to stresses, BPDs in highly N-doped (≥1.0×1018 cm-3) epilayers appear different. Some of them are parallel to [11-20] while others are straight and tilt from [11-20]. Tilt BPDs were also studied by TEM. Factors that relate to such morphology are discussed.
