Paper Title:
Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas
| Periodical | Materials Science Forum (Volume 725) |
|---|---|
| Main Theme | Defects-Recognition, Imaging and Physics in Semiconductors XIV |
| Edited by | Hiroshi Yamada-Kaneta and Akira Sakai |
| Pages | 49-52 |
| DOI | 10.4028/www.scientific.net/MSF.725.49 |
| Citation | Hitoshi Habuka et al., 2012, Materials Science Forum, 725, 49 |
| Online since | July, 2012 |
| Authors | Hitoshi Habuka, Kazuchika Furukawa, Toshimitsu Kanai, Tomohisa Kato |
| Keywords | 4H-SiC, C-Face, Chlorine Trifluoride Gas, Etch Pit |
| Price | US$ 28,- |
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Abstract
The etch pits on the C-face 4H-SiC substrate was produced by chlorine trifluoride gas at various temperatures. The etch pit density showed the comparable value to the current dislocation density level of the Si-face 4H-SiC, when the etching was performed around 713 K. Thus, the etch pit density obtained by this technique is expected to reveal the crystal quality.
