Paper Title:
Rapid Terahertz Imaging of Carrier Density of 3C-SiC
| Periodical | Materials Science Forum (Volume 725) |
|---|---|
| Main Theme | Defects-Recognition, Imaging and Physics in Semiconductors XIV |
| Edited by | Hiroshi Yamada-Kaneta and Akira Sakai |
| Pages | 57-60 |
| DOI | 10.4028/www.scientific.net/MSF.725.57 |
| Citation | Akihide Hamano et al., 2012, Materials Science Forum, 725, 57 |
| Online since | July, 2012 |
| Authors | Akihide Hamano, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki |
| Keywords | Carrier Density, Nondestructive Imaging, Silicon Carbide (SiC), Terahertz |
| Price | US$ 28,- |
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Abstract
The reflectance around the longitudinal optical (LO) phonon frequency in the terahertz region changes with the carrier density of silicon carbide (SiC), while the reflectance around the transverse optical (TO) phonon frequency remains constantly high. The relative reflectance obtained from the reflectance at the two frequencies related to the TO and LO phonon was evaluated as a function of the carrier density of SiC. Two waves around these phonon frequencies can be generated easily using a tunable terahertz source. Nondestructive imaging of the carrier density of cubic SiC (3C-SiC) at the rate of 1 s per point was carried out successfully using this tunable terahertz source.
