Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
p.428
p.428
Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes
p.432
p.432
Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
p.436
p.436
Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
p.440
p.440
Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures
p.444
p.444
Influence of P+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers
p.449
p.449
Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction
p.453
p.453
Evaluation of Mechanical and Optical Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared-Membrane
p.457
p.457
Temperature Dependence of Impact Ionization Coefficients in 4H-SiC
p.461
p.461
Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures
Abstract:
3C-SiC(111) was grown on Si (111) in a thickness range between 20 and 600 nm by low pressure chemical vapour deposition. The mechanical properties and the residual stress were determined using cantilevers and beams. The Youngs modulus of the 3C-SiC(111) decreases with decreasing thickness of the epitaxial layer.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
444-448
Citation:
Online since:
February 2014
Authors:
Keywords:
Price:
Сopyright:
© 2014 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: