Paper Titles

Preface and Conference Committees

3C-SiC: New Interest for MEMS Devices
p.3

Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane
p.11

Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si
p.15

Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si_1-xGe_x/Si(001) Heterostructures
p.21

Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
p.27

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport
p.33

SiC NWs Grown on Silicon Substrate Using Fe as Catalyst
p.39

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
p.45

HomeMaterials Science ForumMaterials Science Forum Vol. 8063C-SiC: New Interest for MEMS Devices

3C-SiC: New Interest for MEMS Devices

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Abstract:

The aim of this paper is to review the recent developments conducted by our groups for the achievement of 3C-SiC based heterostructures compatible for MEMS applications. It deals with different aspects, from the influence of the defects generated at the 3C-SiC/Si interface on the mechanical properties to the elaboration of new multilayered structures, required for specific applications like, for example, Atomic Force Microscopy.

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HeteroSiC & WASMPE 2013

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Periodical:

Materials Science Forum (Volume 806)

Pages:

3-9

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.3

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Online since:

October 2014

Authors:

Jean François Michaud*, Marc Portail, Thierry Chassagne, Marcin Zielinski, Daniel Alquier

Keywords:

3C-SiC, Defect, Membrane, MEMS, Micro Machining, Silicon

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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