Paper Title:
Electron-Trapping Defects in MBE-Grown Relaxed n-In0.05Ga0.95As on Gallium Arsenide
  Abstract

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Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
1291-1296
DOI
10.4028/www.scientific.net/MSF.83-87.1291
Citation
A.C. Irvine, L.K. Howard, D.W. Palmer, "Electron-Trapping Defects in MBE-Grown Relaxed n-In0.05Ga0.95As on Gallium Arsenide", Materials Science Forum, Vols. 83-87, pp. 1291-1296, 1992
Online since
January 1992
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