Paper Title:
Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
1327-1332
DOI
10.4028/www.scientific.net/MSF.83-87.1327
Citation
M. Tajima, H. Takeno, T. Abe, "Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence", Materials Science Forum, Vols. 83-87, pp. 1327-1332, 1992
Online since
January 1992
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Price
$32.00
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