Paper Title:
Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 83-87)
Edited by
Gordon Davies, G.G. DeLeo and M. Stavola
Pages
1375-1380
DOI
10.4028/www.scientific.net/MSF.83-87.1375
Citation
P.O. Holtz, B. Monemar, M. Sundaram, J.L. Merz, A.C. Gossard, C.I. Harris, H. Kalt, "Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level", Materials Science Forum, Vols. 83-87, pp. 1375-1380, 1992
Online since
January 1992
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